The development of SK Hynix’s 238-layer 4D NAND flash memory has been disclosed, and samples of the 512Gb triple-level cell (TLC) chip have already begun to ship.
In the first half of 2023, SK Hynix anticipates starting mass production of 238-layer, 512Gb TLC, 4D NAND flash chips.
The business said that even while the new SK Hynix NAND product achieved the highest layer count of 238 while being the smallest NAND in size, its total productivity had grown by 34% in comparison to the 176-layer NAND. The 238-layer product has a data transfer rate of 2.4Gb per second, which is a 50% improvement over the previous iteration.
The 238-layer 512Gb TLC 4D NAND flash from SK Hynix will initially be used in client SSDs, which are used as PC storage devices. Later, smartphones and high-capacity SSDs for servers will also be made available. Next year, the company also intends to launch 238-layer systems with a terabit (Tb) capacity, double the density of the current 512Gb offering.
The 238-layer, 512Gb TLC 4D NAND flash memory from SK Hynix was revealed at the Santa Clara Flash Memory Summit in 2022.
Another business at the event, Kioxia, unveiled the second iteration of its storage-class memory (SCM) product, the XL-Flash, based on its BiCS Flash 3D flash memory technology. The new XL-Flash will feature 256 gigabits of memory. Shipments of samples are expected to begin in November 2022.
238-layer 4D NAND from SK Hynix flashPhoto: Business